FREIBERGER COMPOUND MATERIALS GMBH

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Patent Activity in the Last 10 Years

Technologies

Intl Class Technology Matters Rank in Class
 
  
 
C30B SINGLE-CRYSTAL GROWTH 2928
 
  
 
H01L SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR 10352
 
  
 
B32B LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM5152
 
  
 
B28D WORKING STONE OR STONE-LIKE MATERIALS 418
 
  
 
C23C COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL 398
 
  
 
C01B NON-METALLIC ELEMENTS; COMPOUNDS THEREOF277
 
  
 
B22D CASTING OF METALS; CASTING OF OTHER SUBSTANCES BY THE SAME PROCESSES OR DEVICES 148
 
  
 
B24B MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING 165
 
  
 
H01B CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING, OR DIELECTRIC PROPERTIES 173
 
  
 
H05B ELECTRIC HEATING; ELECTRIC LIGHTING NOT OTHERWISE PROVIDED FOR 1110

Top Patents (by citation)

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Recent Publications

Publication # Title Filing Date Pub Date Intl Class
2013/0163,967 DEVICE AND METHOD OF EVAPORATING A MATERIAL FROM A METAL MELTDec 20, 12Jun 27, 13[C23C, H05B]
2012/0076,968 METHOD AND APPARATUS FOR FABRICATING CRACK-FREE GROUP III NITRIDE SEMICONDUCTOR MATERIALSDec 01, 11Mar 29, 12[C01B, B32B]
2012/0021,163 METHOD AND DEVICE FOR MANUFACTURING SEMICONDUCTOR COMPOUND MATERIALS BY MEANS OF VAPOUR PHASE EPITAXYJan 20, 11Jan 26, 12[C01B, H01B, C30B, B32B]

Recent Patents

Patent # Title Filing Date Issue Date Intl Class
9896779 Method for producing III-N single crystals, and III-N single crystalMar 21, 13Feb 20, 18[H01L, C30B]
9856579 Method and device for manufacturing semiconductor compound materials by means of vapour phase epitaxyJan 20, 11Jan 02, 18[C30B]
9461121 Process for the manufacture of a doped III-N bulk crystal and a free-standing III-N substrate, and doped III-N bulk crystal and free-standing III-N substrate as suchFeb 05, 14Oct 04, 16[H01L, C30B]
9368585 Arrangement and method for manufacturing a crystal from a melt of a raw material and single crystalDec 20, 13Jun 14, 16[H01L, C30B]
9181633 Device and process for heating III-V wafers, and annealed III-V semiconductor single crystal waferOct 15, 08Nov 10, 15[H01L, C30B]
9115444 Method for producing III-N layers, and III-N layers or III-N substrates, and devices based thereonOct 01, 10Aug 25, 15[H01L, C30B]
9103048 Device and process for producing poly-crystalline or multi-crystalline silicon; ingot as well as wafer of poly-crystalline or multi-crystalline silicon produced thereby, and use for the manufacture of solar cellsDec 21, 07Aug 11, 15[C01B, H01L, B22D, C30B]
9074297 Method and device for manufacturing semiconductor compound materials by means of vapour phase epitaxyFeb 29, 08Jul 07, 15[C30B]
8815392 Process for producing doped gallium arsenide substrate wafers having low optical absorption coefficientNov 08, 12Aug 26, 14[B32B]
8778078 Process for the manufacture of a doped III-N bulk crystal and a free-standing III-N substrate, and doped III-N bulk crystal and free-standing III-N substrate as suchAug 08, 07Jul 15, 14[C30B]

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Expired/Abandoned/Withdrawn Patents

Patent # Title Status Filing Date Issue/Pub Date Intl Class
2009/0286,063 METHOD AND APPARATUS FOR FABRICATING CRACK-FREE GROUP III NITRIDE SEMICONDUCTOR MATERIALSAbandonedSep 22, 08Nov 19, 09[B32B]
2009/0286,331 METHOD FOR SIMULATENOUSLY PRODUCING MULTIPLE WAFERS DURING A SINGLE EPITAXIAL GROWTH RUN AND SEMICONDUCTOR STRUCTURE GROWN THEREBYAbandonedNov 10, 08Nov 19, 09[H01L]
2009/0064,982 WORKPIECE MOUNTING AND METHOD FOR WIRE SAWINGAbandonedNov 12, 08Mar 12, 09[B28D]
2008/0203,408 PROCESS FOR PRODUCING (Al, Ga)lnN CRYSTALSAbandonedFeb 21, 08Aug 28, 08[H01L]
2008/0203,409 PROCESS FOR PRODUCING (Al, Ga)N CRYSTALSAbandonedFeb 21, 08Aug 28, 08[H01L]
2008/0171,133 Method For the Production of C-Plane Oriented Gan Substrates or AlxGa1-xN SubstratesAbandonedJan 18, 06Jul 17, 08[B05D, C30B]
2007/0141,814 PROCESS FOR PRODUCING A FREE-STANDING III-N LAYER, AND FREE-STANDING III-N SUBSTRATEAbandonedDec 20, 06Jun 21, 07[H01L]
2007/0032,046 Method for simultaneously producing multiple wafers during a single epitaxial growth run and semiconductor structure grown therebyAbandonedJul 01, 05Feb 08, 07[H01L]
2006/0280,668 Method and apparatus for fabricating crack-free group III nitride semiconductor materialsAbandonedJul 10, 06Dec 14, 06[C01B]
2006/0011,135 HVPE apparatus for simultaneously producing multiple wafers during a single epitaxial growth runAbandonedJul 01, 05Jan 19, 06[C23C]
2005/0244,997 Bulk GaN and AIGaN single crystalsAbandonedApr 26, 05Nov 03, 05[H01L]
2005/0164,044 Bulk GaN and AlGaN single crystalsAbandonedMar 18, 05Jul 28, 05[B32B]
2003/0005,919 Device and method for separating materialsAbandonedJul 08, 02Jan 09, 03[B28D]
6355910 Heating element for heating crucibles and arrangement of heating elementsExpiredDec 08, 00Mar 12, 02[H05B, C30B]

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